CJ

Chandan Joishi

0000-0001-8456-4839

physics.app-phcond-mat.mtrl-scicond-mat.mes-hall

On Valency

published · living versions

W_ry2me9f3·v1 · currentpublished

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C Air-Ambient Operation of Extreme-Bandgap Al

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N (x>0.6) Digital and Random-Alloy Channel HEMTs

with Abdullah Al Mamun Mazumder, Tariq Jamil, Mafruda Rahman, Muhammad Ali +9

1 version

Preprints & journals

15 papers in the corpus · 2017–2026

Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers2608.12797v1 · Akilesh Srikanth, Md Saklain Morshed, Chandan Joishi et al.2026 · 0 citationsarXiv

A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel2605.24221v1 · Tariq Jamil, Abdullah Al Mamun Mazumder, S M Tazbiul Hasan et al.2026 · 0 citationsarXiv

Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer2512.18107v1 · Yinxuan Zhu, Ashley Wissel-Garcia, Kidus Guye et al.2025 · 2 citationsarXiv

High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors2504.12685v2 · Seungheon Shin, Hridibrata Pal, Jon Pratt et al.2025 · 16 citationsarXiv

Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures2504.01291v2 · Seungheon Shin, Kyle Liddy, Yinxuan Zhu et al.2025 · 0 citationsarXiv

Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN2411.10566v1 · Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi et al.2024 · 18 citationsarXiv

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm

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Current Density2408.14363v1 · Zhanbo Xia, Chandan Joishi, Shahadat H. Sohel et al.2024 · 0 citationsarXiv

Design and Simulation of a III-Nitride Light Emitting Transistor2404.04995v1 · Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi et al.2024 · 3 citationsarXiv

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor2404.05095v2 · Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi et al.2024 · 8 citationsarXiv

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts2309.09886v1 · Chandan Joishi, Sheikh Ifatur Rahman, Zhanbo Xia et al.2023 · 3 citationsarXiv

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Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching2303.04870v1 · Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan et al.2023 · 30 citationsarXiv

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high-k dielectric enabled electric field engineering of

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metal-insulator-semiconductor (MIS) diode2110.13129v1 · Prabhans Tiwari, Jayeeta Biswas, Chandan Joishi et al.2021 · 20 citationsarXiv

Charge trap layer enabled positive tunable V

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gate stacks for enhancement mode transistors2005.05237v1 · Dipankar Biswas, Chandan Joishi, Jayeeta Biswas et al.2020 · 11 citationsarXiv

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures1802.04426v1 · Yuewei Zhang, Adam Neal, Zhanbo Xia et al.2018 · 0 citationsarXiv

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor1706.09492v1 · Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi et al.2017 · 321 citationsarXiv

Career total: 80 works. 15 are in this corpus.

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