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cond-mat.mtrl-sciphysics.comp-phab initio calculationasymmetric injectioncond-mat.mes-hallDirac pointFermi level pinningFermi velocitygraphene field effect transistorhexagonal boron nitride

On Valency

published · living versions
W_9kz7ergh·v1 · currentpublished
Automated Generation of Commensurate Magnetic Structures based on Spin Space Groups and Graph Theory
with Yifan Wang, Boyang Deng, John Robertson, Weisheng Zhao +1
1 version

Preprints & journals

13 papers in the corpus · 2017–2026
Unbiased first-principles construction of complete tensorial spin Hamiltonians2609.13912v1 · Haichang Lu, Boyang Deng, Hiroshi Katsumoto et al.2026 · 0 citationsarXiv
Designing van der Waals magnetic tunnel junctions with high tunnel magnetoresistance via Brillouin zone filtering.39292184 · Li, Kun, Guo, Yuzheng, Robertson, John et al.2024 · 11 citationsNanoscale. 2024;16(41):19228-19238
Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators.37620355 · Wang, Haiyu, Wu, Hao, Zhang, Jie et al.2023 · 123 citationsNature communications. 2023;14(1):5173
Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature.37120587 · Wang, Hangtian, Lu, Haichang, Guo, Zongxia et al.2023 · 94 citationsNature communications. 2023;14(1):2483
Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe22205.02876v1 · Xinhe Wang, Wei Yang, Wang Yang et al.2022 · 25 citationsApplied Physics Reviews 9, 031402 (2022)
Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions.34559966 · Lu, Haichang, Guo, Yuzheng, Robertson, John2021 · 19 citationsACS applied materials & interfaces. 2021;13(39):47226-47235
Modelling the enthalpy change and transition temperature dependence of the metal-insulator transition in pure and doped vanadium dioxide.32524105 · Lu, Haichang, Clark, Stewart, Guo, Yuzheng et al.2020 · 15 citationsPhysical chemistry chemical physics : PCCP. 2020;22(24):13474-13478
Insertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors.30816375 · Zheng, Shan, Lu, Haichang, Liu, Huan et al.2019 · 38 citationsNanoscale. 2019;11(11):4811-4821
Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.29557636 · Lee, Sungsik, Nathan, Arokia, Alexander-Webber, Jack et al.2018 · 9 citationsACS applied materials & interfaces. 2018;10(13):10618-10621
Transfer doping of Graphene by Species of Extreme Work Function1703.07315v1 · Haichang Lu, Yuzheng Guo, John Robertson2017 · 0 citationsarXiv
Career total: 54 works. 13 are in this corpus.

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