MH
Moïra Hocevar
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conphysics.opticsquant-phdensity functional theoryelectronic structureInAsJosephson junctionsmetal−semiconductor interface
On Valency
published · living versionsW_q6bk6bm8·v1 · currentpublished
Growth and morphology of core-shell nanowires incorporating dissimilar hexagonal semiconductors: the case of InAs-ZnTe
with Danylo Mosiiets, Susheng Tan, Sergey Frolov, Joel Cibert +1
1 version
Preprints & journals
38 papers in the corpus · 2009–2026Planar Josephson junctions templated by nanowire shadowing.41926937 · Zhang, P, Zarassi, A, Pendharkar, M et al.2026 · 7 citationsNanotechnology. 2026;37(15)
Tunable anharmonicity in Sn-InAs nanowire transmons beyond the short junction limit2603.26895v1 · Amrita Purkayastha, Amritesh Sharma, Param J. Patel et al.2026 · 0 citationsarXiv
Transmon Qubit Using Sn as a Junction Superconductor.41657054 · Purkayastha, Amrita, Sharma, Amritesh, Patel, Param J et al.2026 · 1 citationNano letters. 2026;26(6):2074-2079
Data sharing helps avoid "smoking gun" claims of topological milestones.41505545 · Frolov, S M, Zhang, P, Zhang, B et al.2026 · 2 citationsScience (New York, N.Y.). 2026;391(6781):137-142
Gate-tunable Josephson parametric amplifiers based on semiconductor nanowires2510.00305v1 · Raphael Rousset-Zenou, Nicolas Aparicio, Simon Messelot et al.2025 · 0 citationsarXiv
Sn-InAs Nanowire Shadow-Defined Josephson Junctions.40815279 · Sharma, Amritesh, Chen, An-Hsi, Dempsey, Connor P et al.2025 · 2 citationsNano letters. 2025;25(34):12869-12875
Hyperspectral Electromechanical Imaging at the Nanoscale: Dynamical Backaction, Dissipation, and Quantum Fluctuations.40091219 · Chardin, Clément, Pairis, Sébastien, Douillet, Sabine et al.2025 · 2 citationsNano letters. 2025;25(12):4774-4780
First-Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface.39800944 · Jardine, Malcolm J A, Dardzinski, Derek, Cai, Zefeng et al.2025 · 9 citationsACS applied materials & interfaces. 2025;17(3):5462-5474
Erratum: Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices [Phys. Rev. Lett. 123, 107703 (2019)].38489658 · Chen, J, Woods, B D, Yu, P et al.2024 · 0 citationsPhysical review letters. 2024;132(9):099901
Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires2401.16269v1 · Danylo Mosiiets, Yann Genuist, Joel Cibert et al.2024 · 8 citationsarXiv
Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates.37890472 · Chen, An-Hsi, Dempsey, Connor, Pendharkar, Mihir et al.2025 · 2 citationsNanotechnology. 2023;35(7)
"Smoking gun" signatures of topological milestones in trivial materials by measurement fine-tuning and data postselection2309.09368v1 · S.M. Frolov, P. Zhang, B. Zhang et al.2023 · 1 citationarXiv
Correction to "First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface".37319365 · Jardine, Malcolm J A, Dardzinski, Derek, Yu, Maituo et al.2023 · 0 citationsACS applied materials & interfaces. 2023;15(25):31100-31101
First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface.36940162 · Jardine, Malcolm J A, Dardzinski, Derek, Yu, Maituo et al.2023 · 12 citationsACS applied materials & interfaces. 2023;15(12):16288-16298
Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect2211.08710v2 · P. Zhang, S. Mudi, M. Pendharkar et al.2022 · 12 citationsSciPost Phys. 18, 203 (2025)
Large Second-Order Josephson Effect in Planar Superconductor-Semiconductor Junctions2211.07119v3 · P. Zhang, A. Zarassi, L. Jarjat et al.2022 · 20 citationsSciPost Phys. 16, 030 (2024)
Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells.33858990 · Pendharkar, M, Zhang, B, Wu, H et al.2021 · 86 citationsScience (New York, N.Y.). 2021;372(6541):508-511
Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells1912.06071v1 · M. Pendharkar, B. Zhang, H. Wu et al.2019 · 7 citationsarXiv
Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure1912.01346v1 · D.V. Beznasyuk, P. Stepanov, J.L. Rouviere et al.2019 · 12 citationsPhys. Rev. Materials 4, 074607 (2020)
Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices.31573319 · Chen, J, Woods, B D, Yu, P et al.2019 · 142 citationsPhysical review letters. 2019;123(10):107703
Effect of Bias on the Response of GaN Axial p-n Junction Single-Nanowire Photodetectors.31369282 · Cuesta, S, Spies, M, Boureau, V et al.2020 · 48 citationsNano letters. 2019;19(8):5506-5514
Erasing odd-parity states in semiconductor quantum dots coupled to superconductors1904.05354v1 · Z. Su, R.Zitko, P. Zhang et al.2019 · 11 citationsPhys. Rev. B 101, 235315 (2020)
Shot-Noise-Limited Nanomechanical Detection and Radiation Pressure Backaction from an Electron Beam.30932572 · Pairis, S, Donatini, F, Hocevar, M et al.2019 · 11 citationsPhysical review letters. 2019;122(8):083603
Mirage Andreev Spectra Generated by Mesoscopic Leads in Nanowire Quantum Dots.30296125 · Su, Z, Zarassi, A, Hsu, J-F et al.2018 · 33 citationsPhysical review letters. 2018;121(12):127705
Andreev molecules in semiconductor nanowire double quantum dots.28928420 · Su, Zhaoen, Tacla, Alexandre B, Hocevar, Moïra et al.2017 · 95 citationsNature communications. 2017;8(1):585
Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices.28913432 · Chen, Jun, Yu, Peng, Stenger, John et al.2023 · 202 citationsScience advances. 2017;3(9):e1701476
Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap.28717162 · Jayaprakash, R, Kalaitzakis, F G, Christmann, G et al.2019 · 40 citationsScientific reports. 2017;7(1):5542
Dislocation-free axial InAs-on-GaAs nanowires on silicon.28671871 · Beznasyuk, Daria V, Robin, Eric, Hertog, Martien Den et al.2018 · 14 citationsNanotechnology. 2017;28(36):365602
Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots1610.04596v1 · Azarin Zarassi, Zhaoen Su, Jeroen Danon et al.2016 · 47 citationsPhys. Rev. B 95, 155416 (2017)
Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires1302.3161v1 · Moira Hocevar, Le Thuy Thanh Giang, Rudeesun Songmuang et al.2013 · 49 citationsarXiv
Avalanche amplification of a single exciton in a semiconductor nanowire1204.4131v1 · Gabriele Bulgarini, Michael E. Reimer, Moira Hocevar et al.2012 · 105 citationsarXiv
Bright single-photon sources in bottom-up tailored nanowires.22415828 · Reimer, Michael E, Bulgarini, Gabriele, Akopian, Nika et al.2012 · 448 citationsNature communications. 2012;3:737
From InSb nanowires to nanocubes: looking for the sweet spot.22364222 · Plissard, Sébastien R, Slapak, Dorris R, Verheijen, Marcel A et al.2012 · 127 citationsNano letters. 2012;12(4):1794-8
Growth and optical properties of axial hybrid III-V/silicon nanowires.23232396 · Hocevar, Moïra, Immink, George, Verheijen, Marcel et al.2013 · 124 citationsNature communications. 2012;3:1266
Controlling the directional emission of light by periodic arrays of heterostructured semiconductor nanowires.21714507 · Diedenhofen, Silke L, Janssen, Olaf T A, Hocevar, Moïra et al.2011 · 27 citationsACS nano. 2011;5(7):5830-7
Crystal structure transfer in core/shell nanowires.21417242 · Algra, Rienk E, Hocevar, Moïra, Verheijen, Marcel A et al.2011 · 107 citationsNano letters. 2011;11(4):1690-4
Single photon emission and detection at the nanoscale utilizing semiconductor nanowires1009.0361v1 · Michael E. Reimer, Maarten P. van Kouwen, Maria Barkelid et al.2010 · 42 citationsarXiv
Generic nano-imprint process for fabrication of nanowire arrays.20057022 · Pierret, Aurélie, Hocevar, Moïra, Diedenhofen, Silke L et al.2010 · 82 citationsNanotechnology. 2010;21(6):065305
Career total: 90 works. 38 are in this corpus.
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