Growth and morphology of core-shell nanowires incorporating dissimilar hexagonal semiconductors: the case of InAs-ZnTe

Abstract

Core-shell nanowires incorporating semiconductors from two groups, III-V for the core and II-VI for the shell, have been grown by molecular beam epitaxy in two dedicated chambers connected under ultra-high vacuum, and studied by electron microscopy. During the growth of the shell, the wurtzite structure of the core is replicated in the shell, without any creation of defects. This is true for a wide range of shell thickness, from about one monolayer, up to 25 nm thanks to the good lattice match between the InAs material of the core and the ZnTe material of the shell. While (1 100) m-facets and (11 20) a-facets coexist on the sidewalls of the core, during the growth of the ZnTe shell the size of the m-facets progressively increases at the expense of the a-facets which eventually disappear. A fast growth of the ZnTe shell is observed for the first few monolayers, with a high sticking; this is followed by a slower growth, of the same order of magnitude as observed on a ZnTe core, with a dependence on the nanowire radius which points to the occurrence of mononuclear nucleation